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MULTI-GENERATOR, PARTIAL ARRAY Vt, TRACKING SYSTEM TO IMPROVE ARRAY RETENTION TIME

机译:多发生器,部分阵列Vt跟踪系统,可改善阵列保留时间

摘要

Improved transistor array device performance is obtained by use of bias voltage regulation which tracks with a fraction of a monitor transistor threshold voltage. The circuitry and methods are especially useful for improving the performance of transistor array devices such as DRAM and embedded DRAM. These benefits are obtained especially when at least two bias voltages normally supplied to the array are regulated by tracking with a fraction of an actual threshold voltage of at least one monitor transistor. Performance improvements include improved reliability, wider operational bias conditions, reduced power consumption and (in the case of memory cells) improved retention time.
机译:通过使用偏置电压调节来获得改善的晶体管阵列器件性能,该偏置电压跟踪的监视晶体管阈值电压的一部分。该电路和方法对于改善诸如DRAM和嵌入式DRAM的晶体管阵列设备的性能特别有用。特别是当通过至少一个监控晶体管的实际阈值电压的一小部分进行跟踪来调节通常提供给阵列的至少两个偏置电压时,可以获得这些好处。性能方面的改进包括改进的可靠性,更宽的操作偏置条件,降低的功耗以及(对于存储单元而言)缩短的保留时间。

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