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FAMILY OF DISCRETELY SIZED SILICON NANOPARTICLES AND METHOD FOR PRODUCING THE SAME

机译:离散硅纳米粒子族及其制备方法

摘要

A family of discrete and uniformly sized silicon nanoparticles, including 1 (blue emitting), 1.67 (green emitting), 2.15 (yellow emitting), 2.9 (red emitting) and 3.7 nm (infrared emitting) nanoparticles, and a method that produces the family. The nanoparticles produced by the method of the invention are highly uniform in size. A very small percentage of significantly larger particles are produced, and such larger particles are easily filtered out. The method for producing the silicon nanoparticles of the invention utilizes a gradual advancing electrochemical etch of bulk silicon, e.g., a silicon wafer. The etch is conducted with use of an appropriate intermediate or low etch current density. An optimal current density for producing the family is ~10 milli Ampere per square centimeter (10 mA/cmSUP2/SUP). Higher current density favors 1 nm particles, and lower the larger particles. Blue (1 nm) particles, if any appreciable quantity exist depending on the selected current density, may be removed by, for example, shaking or ultrasound. After the etch, the pulverized wafer is immersed in dilute HF for a short time, while the particles are still connected to the wafer to weaken the linkages between the larger particles. This may be followed by separation of nanoparticles from the surface of the silicon. Once separated, various methods may be employed to form plural nanoparticles into crystals, films and other desirable forms. The nanoparticles may also be coated or doped. The invention produces the family of a discrete set of sized particles and not a continuous size distribution. Particles may be isolated from the family, i.e., it is possible to produce any one of the sizes of particles from the family after the basic method steps have been executed to produce the family of particles.
机译:一族离散且尺寸均匀的硅纳米粒子,包括1(蓝色发射),1.67(绿色发射),2.15(黄色发射),2.9(红色发射)和3.7 nm(红外发射)纳米粒子,以及产生该族的方法。通过本发明的方法生产的纳米颗粒尺寸高度均匀。产生非常小百分比的明显较大的颗粒,并且这种较大的颗粒易于滤出。用于生产本发明的硅纳米颗粒的方法利用对块状硅例如硅晶片的逐步推进的电化学蚀刻。使用适当的中间或低蚀刻电流密度来进行蚀刻。用于生产该系列的最佳电流密度为每平方厘米约10毫安(10 mA / cm 2 )。较高的电流密度有利于1 nm的粒子,而较低的粒子更大。如果根据选择的电流密度存在明显的数量的蓝色(1 nm)粒子,则可以通过例如摇动或超声波的方式去除。蚀刻后,将粉碎的晶圆短时间浸入稀释的HF中,同时颗粒仍与晶圆连接,从而削弱了较大颗粒之间的键合。随后可以将纳米颗粒与硅表面分离。一旦分离,可以采用各种方法将多个纳米颗粒形成晶体,薄膜和其他所需形式。纳米颗粒也可以被涂覆或掺杂。本发明产生一组离散的尺寸颗粒而不是连续的尺寸分布的族。可以从族中分离颗粒,即,在执行基本方法步骤以生产颗粒族之后,可以从族中生产任何尺寸的颗粒。

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