Ohmic contacts using Ni-based solid solution for p-type GaN in LEDs

摘要

Disclosed herein is a technique for forming a high quality ohmic contact utilizable LEDs using a gallium nitride (GaN) semiconductor.;The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.