Metal thin film and the produce method for development of ohmic contact using Ni-based solid solution for high-quality optical devices related to GaN

摘要

Disclosed herein is a technique for forming a high quality ohmic contact utilizable LEDs using a gallium nitride (GaN) semiconductor. ??The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region. IMAGE