MAGNETICALLY ENHANCED PLASMA ETCH PROCESS USING A HEAVY FLUOROCARBON ETCHING GAS

摘要

In the magnetic-flight of the reactive ion etching (MERIE) plasma enhanced reaction was subjected to oxide etching process. The etching gas is most preferably in the same amount of carbon and oxygen without the pullulans ohreuhwa C4F6 hydrogen and a rough and contains a much larger amount of argon diluent gas. Preferably, the magnetic field is about 50 Gauss or higher is maintained to be the pressure is maintained at more than 40 Milito chamber residence time it is 70 milliseconds or less. You may apply a two-step process in order to etch the holes of a very large aspect ratio. In the second step, the magnetic field is reduced and oxygen flow. F / C ratio of 2 or less, it may be replaced by the more preferably 1.6 or 1.5, other pullulans ohreuhwa carbon.