MAGNETICALLY ENHANCED PLASMA ETCH PROCESS USING A HEAVY FLUOROCARBON ETCHING GAS

摘要

Was performed magnetically reactive ion etching (MERIE) plasma oxide etch processes in response to the enhanced in-flight. The etching gas is most preferably C ₄ F ₆ is hydrogen is not contained in the same amount of fluorine to carbon dioxide and oxygen, and a rough and contains a much larger amount of argon dilution gas. Preferably, the magnetic field is being maintained above about 50 Gauss pressure is maintained at more than 40 milliTorr chamber residence time is 70 milliseconds or less. To etch the holes of a very large aspect ratios can also be applied to the process of two-step. Claim is in Step 2, the magnetic field and the flow of oxygen is reduced. F / C ratio of 2 or less, preferably 1.6 or 1.5 may be replaced by other than the fluorocarbon.