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INORGANIC THIN FILM, ORGANIC ELECTRONIC DEVICE INCLUDING INORGANIC THIN FILM AND FABRICATION METHOD

机译:无机薄膜,包括该无机薄膜的有机电子设备及其制造方法

摘要

PURPOSE: An inorganic thin film is provided to prevent a permeation of a moisture and an oxygen and fabricate the inorganic thin film from an inorganic composite having an inorganic materials more than two with a prescribed ratio. CONSTITUTION: An inorganic thin film(7a) comprises an inorganic composite mixed more than two inorganic materials selected from a group constituted by a metal, a nonmetallic oxide, a nitride, and a salt, and have a permeation prevention characteristics of an improved moisture and an oxygen. The metal and the nonmetallic oxide have a silicon oxide(SiO2), a magnesium oxide(MgO), a calcium oxide(CaO), an aluminum oxide(Al2O3), a titanium oxide(TiO2), a zirconium oxide(ZrO2), a tantalum oxide(Ta2O3), and a sodium oxide(NayOx). The nitride has a silicon nitride(Si3N4), and a magnesium fluoride(MgF2).
机译:用途:提供无机薄膜以防止水分和氧气渗透,并以规定比例由具有两种以上无机材料的无机复合材料制成无机薄膜。组成:一种无机薄膜(7a)包含一种无机复合材料,混合了两种以上的无机材料,这些材料选自金属,非金属氧化物,氮化物和盐,具有防潮特性,可改善水分和氧气。金属和非金属氧化物具有氧化硅(SiO 2),氧化镁(MgO),氧化钙(CaO),氧化铝(Al 2 O 3),氧化钛(TiO 2),氧化锆(ZrO 2),氧化钽(Ta2O3)和氧化钠(NayOx)。氮化物具有氮化硅(Si 3 N 4)和氟化镁(MgF 2)。

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