CMOS image sensor having different depth of photodiode by Wavelength of light

摘要

PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor having a different depth of photodiode according to the wavelength of light and a manufacturing method thereof are provided to be capable of restraining a crosstalk phenomenon. CONSTITUTION: A CMOS image sensor is provided with the first photo diode for red light, the second photo diode for blue light, and the third photo diode for green light. At this time, the first photo diode has the largest depth out of the photo diodes and the second photo diode has the smallest depth out of the photo diodes. Preferably, the first, second, and third photo diode have P type ion implantation regions(35c,35a,35b) and N type ion implantation regions(33,31,32). Preferably, the first, second, and third photo diodes are formed at a P type epitaxial layer(22).