CMOS image sensor including photodiodes having different depth according to wavelength of light

摘要

An image sensor capable of preventing the cross-talk phenomenon due to a deep penetration depth and a low absorption coefficient of red light in a photodiode region and a method for fabricating the same, wherein the photodiode for collecting incident light has different depths in accordance with the wavelength of the incident light. The photodiode for receiving red light, which has the longest wavelength, has the deepest depth, the photodiode for receiving blue light has the least depth, and the photodiode for receiving green light, which has a wavelength between the red light and the blue light has an intermediate depth.