首页> 外国专利> ELECTRO-OPTICAL DEVICE FOR ENHANCING A LIGHT SHIELDING PERFORMANCE WITH RESPECT TO A SEMICONDUCTOR LAYER OF A TFT AND AN ELECTRONIC DEVICE

ELECTRO-OPTICAL DEVICE FOR ENHANCING A LIGHT SHIELDING PERFORMANCE WITH RESPECT TO A SEMICONDUCTOR LAYER OF A TFT AND AN ELECTRONIC DEVICE

机译:相对于TFT和电子器件的用于提高光屏蔽性能的光电器件

摘要

PURPOSE: An electro-optical device and an electronic device are provided to restrain the generation of light leak current by enhancing a light shielding performance with respect to a semiconductor layer of a TFT(Thin Film Transistor). CONSTITUTION: A data line(6a) is extended in the first direction. A scan line(3a) is extended in the second direction crossed with the data line. A pixel electrode(9a) and a TFT(Thin Film Transistor)(30) are disposed to correspond to a cross region of the data line and the scan line. A storage capacitor(70) is electrically connected to the TFT and the pixel electrode. The TFT has a semiconductor layer(1a). The semiconductor layer includes a channel region extended in a longitudinal direction and a channel adjacent region more extended from the channel region in the longitudinal direction. The scan line has a light shielding part at a side of the channel region.
机译:用途:提供一种电光装置和电子装置,以通过增强相对于TFT(薄膜晶体管)的半导体层的遮光性能来抑制漏光电流的产生。组成:数据线(6a)在第一个方向上延伸。扫描线(3a)在与数据线交叉的第二方向上延伸。像素电极(9a)和TFT(薄膜晶体管)(30)被设置为对应于数据线和扫描线的交叉区域。存储电容器(70)电连接到TFT和像素电极。 TFT具有半导体层(1a)。半导体层包括在纵向方向上延伸的沟道区域和在纵向方向上从沟道区域进一步延伸的沟道相邻区域。扫描线在沟道区域的一侧具有遮光部。

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