Analysis method for Micro-defect near suface of silicon wafer

摘要

PURPOSE: A method for analyzing micro-defects near the surface of silicon wafer is provided to analyze micro defects not greater than 1 micrometer and various kinds of defects except an oxygen deposition defect without using expensive equipment. CONSTITUTION: A silicon wafer is prepared(S1). The silicon wafer is inserted into a chamber of reactive ion etching equipment, and the inside of the chamber is controlled to be a vacuum state of 5E-5 to 5E-6 torr(S2). CF4 gas as reactive ion etching gas is injected to the inside of the chamber while an etching plasma generating voltage is applied to the silicon wafer as a reactive ion etching target to perform a reactive ion etch process on the silicon wafer(S3). A particle counter inspection is performed on the reactive ion-etched silicon wafer(S4). The near surface micro-defect on the silicon wafer is inspected by using an electron microscope or an optical microscope(S5).