首页> 外国专利> Thin medium i.e. silicon wafer, irradiating and medium penetration recording method for detection of e.g. micro-defect within module, involves determining whether test sample is formed of single material or applied on substrate

Thin medium i.e. silicon wafer, irradiating and medium penetration recording method for detection of e.g. micro-defect within module, involves determining whether test sample is formed of single material or applied on substrate

机译:薄介质即硅片,用于检测例如模块内的微缺陷,涉及确定测试样品是由单一材料制成还是应用于基材

摘要

The method involves bringing a thin medium i.e. silicon wafer (2), to be examined, between an X-ray radiation source (1) i.e. X-ray tube, and an imaging system i.e. camera (3), where the medium is used in photovoltaic. Sides of a test sample are irradiated. A determination is made to check whether the test sample includes a mono or polycrystalline structure. A determination is made to check whether the test sample is formed of single material or applied on a substrate, through vaporization of amorphous silicon.
机译:该方法包括将薄介质即要检查的硅晶片(2)置于X射线辐射源(1)(即X射线管)和成像系统(照相机)(3)之间,其中光伏。照射测试样品的侧面。确定检查测试样品是否包括单晶或多晶结构。通过无定形硅的汽化来确定测试样品是由单一材料形成还是施加在基板上。

著录项

  • 公开/公告号DE102007042521A1

    专利类型

  • 公开/公告日2009-03-12

    原文格式PDF

  • 申请/专利权人 STOHLER FRANK;

    申请/专利号DE20071042521

  • 发明设计人

    申请日2007-09-07

  • 分类号G01N23/04;G01N23/18;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:37

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