SEMICONDUCTOR DEVICE WITH IMPROVED INNER LEAD TO REALIZE FINE PITCH BETWEEN INNER LEADS

摘要

PURPOSE: A semiconductor device is provided to realize a fine pitch between inner leads within present precision of bonding by improving the structure of the inner lead. CONSTITUTION: The first protruded electrodes(98a) are arranged on a periphery of a semiconductor chip. The second protruded electrodes(98b) are arranged on a predetermined portion of the chip. The second protruded electrodes are nearer to a center of the chip than the first protruded electrodes. A pair of second inner leads(100b) for connecting each second protruded electrode are installed between the neighboring first protruded electrodes on a film substrate. At least one out of the second inner leads is bent according to a position connected with the second protruded electrode. The second inner leads have the smallest pitch between the first protruded electrodes.