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Semiconductor Device and Method of Forming Duplex Plated Bump-On-Lead Pad Over Substrate for Finer Pitch Between Adjacent Traces
Semiconductor Device and Method of Forming Duplex Plated Bump-On-Lead Pad Over Substrate for Finer Pitch Between Adjacent Traces
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机译:半导体器件和在衬底上形成双金属镀铅凸点焊盘的方法,以在相邻迹线之间形成更细的间距
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摘要
A semiconductor device has a substrate. A first conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the first conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.
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