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CMP slurry for tungsten and manufacturing method for tungsten plug of semiconductor device using the same
CMP slurry for tungsten and manufacturing method for tungsten plug of semiconductor device using the same
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机译:用于钨的CMP浆料和使用该浆料的半导体器件的钨塞的制造方法
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摘要
PURPOSE: A slurry for CMP of tungsten and a method for forming a tungsten plug of a semiconductor device using the same are provided to prevent plug recess and erosion by using slurry including ionization oxidant such as HMnO4 and H2CrO4. CONSTITUTION: An interlayer dielectric(22) is formed on a substrate(21). A contact hole is formed by selectively etching the interlayer dielectric. A metal barrier layer(24) and a tungsten film are sequentially formed in the contact hole. A tungsten plug(25a) is formed by polishing the tungsten film and the metal barrier layer using slurry including ionization oxidant of HMnO4 or H2CrO4 of 0.1-5 weight percent.
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