首页> 外国专利> POROUS SI3N4 AND PREPARING METHOD THEREOF WITH HIGH POROSITY AND HIGH ASPECT RATIO FOR FILTERING

POROUS SI3N4 AND PREPARING METHOD THEREOF WITH HIGH POROSITY AND HIGH ASPECT RATIO FOR FILTERING

机译:具有高孔隙率和高纵横比的多孔SI3N4及其制备方法

摘要

PURPOSE: Provided are a porous Si3N4 with high porosity and a high aspect ratio for filtering by using inexpensive metal silicon as starting materials, and preparing method thereof. CONSTITUTION: The porous Si3N4 is prepared by the steps of: (a) mixing Si powder with as a first sintering agent, powder of at least one compound of the rare earth element in an amount of 7.5-4.5 parts by weight, based on 100 parts by weight of Si powder calculated as the oxide to obtain mixed powder; (b) adding a binder to the mixed powder; (c) molding the mixture into a molded body; (d) heating the molded body to 300-500 deg.C in a nitrogen atmosphere to remove the binder to form a binder-free body; (e) heating the binder-free body to 1350-1500 deg.C in a nitrogen atmosphere to form a nitrided body; and (f) sintering the nitrided body at 1750-1900 deg.C under nitrogen pressure of 0.1-1 atmospheric pressure.
机译:用途:提供一种具有高孔隙率和高纵横比的多孔Si 3 N 4,该多孔Si 3 N 4以廉价的金属硅为原料进行过滤,其制备方法。组成:多孔Si 3 N 4的制备步骤如下:(a)将硅粉与至少一种稀土元素化合物的粉末作为第一烧结剂混合,其粉末含量为7.5-4.5重量份,基于100计算为氧化物的Si粉末的重量份,得到混合粉末。 (b)在混合粉末中加入粘合剂; (c)将混合物模制成模体; (d)在氮气气氛中将成型体加热至300-500℃以除去粘合剂以形成无粘合剂的体; (e)在氮气气氛中将无粘合剂的物体加热到1350-1500℃以形成氮化的物体; (f)在氮气压力为0.1-1大气压下于1750-1900℃烧结氮化物。

著录项

  • 公开/公告号KR20040067951A

    专利类型

  • 公开/公告日2004-07-30

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC INDUSTRIES LTD.;

    申请/专利号KR20040003643

  • 发明设计人 SATOH TAKESHI;PARK JIN JOO;

    申请日2004-01-19

  • 分类号C04B35/594;C04B38/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:23

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