NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH IS FABRICATED BY CHANGING ERASE UNIT, IN WHICH FLASH MEMORY WITH 4K WORD BLOCKS AND FLASH MEMORY WITHOUT 4K WORD BLOCKS ARE REALIZED IN ONE CHIP

摘要

PURPOSE: A nonvolatile semiconductor memory device is provided, which is fabricated by changing an erase unit and simplifies its design and fabrication by realizing a flash memory having 4k word blocks and a flash memory not having 4k word lines in one chip. CONSTITUTION: According to the nonvolatile semiconductor memory device, an input/output data buffer(22) receives signals(DQ0-DQ15) from the external of a chip during a write operation and outputs signals(DQ0-DQ15) during a read operation. A control unit(2) includes a program and verification circuit(4), a sense amplifier(6), an internal controller(8), an address buffer(16), a predecoder(18) and a conversion signal generation circuit(10). The conversion signal generation circuit outputs a signal(BOOTE). The address buffer receives address bits of an address signal from the external and then outputs them to the predecoder. The predecoder outputs the decoding result to a row/column decoder(20). A memory array(26) includes memory blocks(B000-B007) having 4k word memory capacity and memory blocks(B008-B022,B100) having 32k word memory capacity.