METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE TO FORM CONTACT HOLE AFTER INTERVAL BETWEEN GATE ELECTRODE STRUCTURES IS GUARANTEED

摘要

A kind of purpose: method, the contact hole for being used to form semiconductor device is arranged to promote the formation of a contact hole, after being guaranteed by eliminating a gate electrode spacer before contact hole is formed and by forming an interval of the contact hole between gate electrode structure. Construction: gate electrode structure is formed in semi-conductive substrate (100), disconnected from each other by a predetermined space. First gasket is formed in the both sidewalls of gate electrode structure. (135a, 135b) is formed at the semiconductor substrate two sides of gate electrode structure in one interface. First gasket is eliminated. One layer insulation (145) is deposited on composite structure. Layer insulation is etched so that interface exposes, so that a contact hole (155) is formed. Second gasket (150) is formed in the side wall of contact hole.