SEMICONDUCTOR LASER DIODE AND SEMICONDUCTOR LASER DIODE ASSEMBLY ADOPTING THE SAME, IN WHICH STRESS CONCENTRATED ON A RIDGE WAVEGUIDE IS DISPERSED

摘要

PURPOSE: A semiconductor laser diode and a semiconductor laser diode assembly adopting the same are provided to disperse stress concentrated on a ridge waveguide when being flip-chip-bonded to a submount. CONSTITUTION: According to the semiconductor laser diode(100a) including the first layer(120) and the second layer(140) and an active layer(130) intervened between the first layer and the second layer, a ridge waveguide is formed on an upper layer of the second layer in a ridge shape and defines a channel revealing the uppermost layer of the second layer, and the second electrode layer contacting the uppermost layer of the second layer is formed on the ridge waveguide. And the first projected part is located at one side of the ridge waveguide, and has the same height as the ridge waveguide.