Submount of semiconductor laser diode, manufacturing method thereof and semiconductor laser diode assembly adopting the same

摘要

sub-mount of the disclosed semiconductor laser diode includes a first electrode and a second electrode be formed in a step with each other The semiconductor laser diode chip with flip-chip mounting of the semiconductor laser diode in the sub-bonded, and the first and the second stage is provided When the substrate has a height difference corresponding to a difference in level of the first electrode and the second electrode, The first and second and first and second metal layers being formed to the same thickness in full, however, the first and first and respectively formed to the same thickness are joined respectively to the first electrode and a second electrode on the second metal layer second solder layer, and the like. Such the semiconductor laser diode chip configured by flip-chip bonding by the two solder layer is bonded at both electrodes melt uniformly and it is possible to effectively release heat generated during operation of the semiconductor laser diode chip.