BI THIN FILM FABRICATION METHOD AND SPIN ELECTRON ELEMENT USING BI THIN FILM MANUFACTURED BY ELECTRODEPOSITION METHOD AND SPUTTERING METHOD

摘要

PURPOSE: A Bi thin film fabrication method is provided to fabricate a Bi thin film having a very big magnetoresistance property at room temperature by an electrodeposition method and a sputtering method, thereby being applicable to various spin electron elements. CONSTITUTION: By applying a current having a range of 1-100mA to a Bi solution at room temperature, a Bi thin film is formed on a substrate through an electrodeposition method with a deposition rate of 0.1-10micrometer/min. The fabricated Bi thin film has more than 600% of magnetoresistance ratio at room temperature when a 9T magnetic field is applied. Before depositing the Bi thin film, a Pt or Au under layer is deposited on the substrate with a thickness of 50-500 angstrom.