APPARATUS FOR IRRADIATING LASER, METHOD FOR IRRADIATING LASER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, IN WHICH AREA OF BEAM SPOT IS DRASTICALLY BROADEN

摘要

PURPOSE: An apparatus for irradiating a laser, a method for irradiating a laser and a method for manufacturing a semiconductor device are provided to drastically broaden the area of the beam spot, decrease the proportion of the region having the inferior crystallinity and suppress the formation of the ridge. CONSTITUTION: An apparatus for irradiating a laser includes a first laser oscillator(101), a first lens unit(103), a second laser oscillator(110), a second lens unit(112) and a stage(107). The first laser oscillator generates a pulse oscillation of first laser light. The absorption coefficient of the first laser light to a semiconductor film is 1x104cm-1 or more. The first lens unit controls a shape and a position of a region irradiated by the first laser light. The second laser oscillator generates a continuous wave oscillation of second laser light. The second lens unit controls a shape and a position of a region irradiated by the second laser light so as to overlap with the region irradiated by the first laser light. The second lens unit controls positions of the region irradiated by the first laser light and the region irradiated by the second laser light relative to the semiconductor film. The region irradiated by the first laser light and the region irradiated by the second laser light are overlapped in such a way that the region irradiated by the first laser light falls within the region irradiated by the second laser light.