LASER IRRADIATION APPARATUS FOR REDUCING REGION HAVING LOW CRYSTALLINITY BY ENLARGING BEAM SPOT AREA, METHOD FOR IRRADIATING LASER, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE THEREBY

摘要

PURPOSE: A laser irradiation apparatus for reducing a region having low crystallinity by enlarging a beam spot area, a method for irradiating a laser, and a method for fabricating a semiconductor device thereby are provided to prevent reduction of area which has low crystallization by expending beam spot area. CONSTITUTION: A laser irradiation apparatus includes a first laser oscillator, a first controller, a second laser oscillator, a second controller, and a third controller. The first laser oscillator(101) is used for generating a first pulsed laser beam having a wavelength corresponding to an absorption coefficient of 1x10¬4cm¬-1 or more to a processing target. The first controller is used for controlling a shape and a position of a beam spot of the first laser beam. The second laser oscillator(110) is used for generating a second continuous wave laser beam. The second controller is used for controlling a shape and a position of a beam spot of the second laser beam which overlaps with the beam spot of the first laser beam. The third controller is used for controlling a relative position of the beam spots of the first laser beam and the beam spot of the second laser beam to the processing target.