METHOD FOR FABRICATING POLYSILICON THIN FILM BY LATERAL GROWTH INDUCED METHOD USING COPPER AND NICKEL TO REMARKABLY REDUCE INTERVAL OF FABRICATING TIME

摘要

A method of fabricating polysilicon film by Nickel/Copper induced lateral crystallization for the TFT-LCD, comprising the step of: (a) a thin (~ 50 nm) Copper and Nickel being evaporated onto the substrate; (b) a amorphous-silicon film (~ 200 nm) being evaporated onto thereof obtained according to (a); (c) applying annealing at less than 600 DEG C to thereof obtained according to (b) for fast fabricating poly-silicon film. It is approximately 10 times larger than that of Ni-induced poly-silicon. The present invention is to provide the hydrogenated amorphous silicon (a-Si:H) films annealing at a high-temperature furnace having low-temperature fast fabricating poly-silicon film for substantially time-reduced process and industrial applicability.