SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR ARRANGING THE SAME, IN WHICH INTERNAL VOLTAGE IS BOOSTED TO THE PREDETERMINED LEVEL RAPIDLY

摘要

PURPOSE: A semiconductor memory device and a method for arranging the same are provided to rapidly and uniformly make the voltage level of the internal voltage generation lines a desired internal voltage level by arranging driver of the active internal voltage generation circuit at both ends of the internal voltage generation line. CONSTITUTION: A semiconductor memory device includes a memory cell array(10), a plurality of internal voltage generation lines(VINTA1-VINTA3), a column decoder(12), an internal voltage generation circuit(30) and a plurality of drivers(30-1,30-2,30-3). The memory cell array(10) is provided with a plurality of bitlines formed in column direction with respect to the plurality of wordlines, a plurality of column selection lines and a plurality of memory cell array blocks. The internal voltage generation lines(VINTA1-VINTA3) are formed between the plurality of memory cell array blocks. The column decoder(12) selects the column selection lines by decoding the column address. The internal voltage generation circuit(30) is placed at both ends of the memory cell array(10) to generate the comparison signal by comparing the reference voltage with the internal voltage. And, the plurality of drivers(30-1,30-2,30-3) supplies the internal voltage to a plurality of the internal voltage generation lines(VINTA1-VINTA3) in response to the comparison signal.