首页> 外国专利> POWER-ON RESET CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME, ESPECIALLY OBTAINING ENOUGH INITIALIZATION PERIOD

POWER-ON RESET CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME, ESPECIALLY OBTAINING ENOUGH INITIALIZATION PERIOD

机译:上电复位电路和半导体集成电路器件,包括相同的器件,尤其是具有足够的初始化周期的器件

摘要

PURPOSE: A power-on reset circuit and a semiconductor integrated circuit device including the same are provided which can assure an initialization operation of a memory device at a low power supply voltage. CONSTITUTION: An internal circuit(150) includes at least one latch. And a power-on reset circuit(200) generates a power-on reset signal to reset the latch during power-on. The transition of the power-on reset signal of the power-on reset circuit is done after a constant time since a power supply voltage reaches a detection voltage during the power-on. The detection voltage is higher than a threshold voltage of a MOS transistor and lower than the power supply voltage.
机译:用途:提供了上电复位电路和包括该上电复位电路的半导体集成电路装置,其可以确保在低电源电压下存储装置的初始化操作。组成:一个内部电路(150)包括至少一个锁存器。上电复位电路(200)产生上电复位信号以在上电期间复位锁存器。由于在上电期间电源电压达到检测电压,所以在一定时间之后进行上电复位电路的上电复位信号的转变。检测电压高于MOS晶体管的阈值电压并且低于电源电压。

著录项

  • 公开/公告号KR20040094224A

    专利类型

  • 公开/公告日2004-11-09

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030028289

  • 发明设计人 CHUN GI CHEOL;SIM JAE YUN;

    申请日2003-05-02

  • 分类号G11C7/20;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:38

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