Multi-exposure method with increased overlay accuracy and recording medium in which the exposure method is recorded

摘要

Multi-exposure lithography systems are provided for improved overlay accuracy. In one aspect, a method for multi-exposure lithography operates by determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.