FERROELECTRIC MEMORY WITH FERROELECTRIC THIN FILM HAVING THICKNESS OF 90 NANOMETERS OR LESS, AND METHOD OF MAKING SAME

摘要

A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300 DEG C. for five minutes, then RTP annealed at 675 DEG C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700 DEG C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 90 nm. A second electrode is applied to form a capacitor, and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700 DEG C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8/=u/=1.0, 2.0/=v/=2.3, and 1.9/=w/=2.1.