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METHOD FOR DRIVING A MULTI-DIGIT HIGH-DENSITY RECORDING MEDIUM BY USING OXIDATION, ESPECIALLY IN CONNECTION WITH FORMING VARIOUS SIZES OF OXIDE SPOTS ON A SURFACE BY USING AN OXIDIC REACTION OF A SEMICONDUCTOR MATERIAL OR DEPOSITED METAL
METHOD FOR DRIVING A MULTI-DIGIT HIGH-DENSITY RECORDING MEDIUM BY USING OXIDATION, ESPECIALLY IN CONNECTION WITH FORMING VARIOUS SIZES OF OXIDE SPOTS ON A SURFACE BY USING AN OXIDIC REACTION OF A SEMICONDUCTOR MATERIAL OR DEPOSITED METAL
PURPOSE: A method for driving a multi-digit high-density recording medium by using oxidation is provided to form various sizes of oxide spots at an oxidic layer of a semiconductor or metal by applying a voltage to a tip, thereby guaranteeing a high data storage density while semi-permanently guaranteeing a data maintenance period. CONSTITUTION: Oxide spots(60) are selectively oxidized by controlling size of a pulse voltage applied to a tip(50) or an applying time of the pulse voltage, and wherein the tip(50) moves a phase of an oxidic layer(30). The oxide spots(60) are differently formed in size. A bias voltage is applied between the oxidic layer(30) and the tip(50), to selectively read sizes of the oxidized oxide spots with the tip(50).
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