首页> 外国专利> METHOD FOR DRIVING A MULTI-DIGIT HIGH-DENSITY RECORDING MEDIUM BY USING OXIDATION, ESPECIALLY IN CONNECTION WITH FORMING VARIOUS SIZES OF OXIDE SPOTS ON A SURFACE BY USING AN OXIDIC REACTION OF A SEMICONDUCTOR MATERIAL OR DEPOSITED METAL

METHOD FOR DRIVING A MULTI-DIGIT HIGH-DENSITY RECORDING MEDIUM BY USING OXIDATION, ESPECIALLY IN CONNECTION WITH FORMING VARIOUS SIZES OF OXIDE SPOTS ON A SURFACE BY USING AN OXIDIC REACTION OF A SEMICONDUCTOR MATERIAL OR DEPOSITED METAL

机译:通过氧化来驱动多位数高密度记录介质的方法,特别是与通过使用半导体材料或沉积金属进行的氧化反应在表面上形成各种大小的氧化物斑点有关的方法

摘要

PURPOSE: A method for driving a multi-digit high-density recording medium by using oxidation is provided to form various sizes of oxide spots at an oxidic layer of a semiconductor or metal by applying a voltage to a tip, thereby guaranteeing a high data storage density while semi-permanently guaranteeing a data maintenance period. CONSTITUTION: Oxide spots(60) are selectively oxidized by controlling size of a pulse voltage applied to a tip(50) or an applying time of the pulse voltage, and wherein the tip(50) moves a phase of an oxidic layer(30). The oxide spots(60) are differently formed in size. A bias voltage is applied between the oxidic layer(30) and the tip(50), to selectively read sizes of the oxidized oxide spots with the tip(50).
机译:目的:提供一种通过使用氧化来驱动多位高密度记录介质的方法,该方法是通过向尖端施加电压在半导体或金属的氧化层上形成各种大小的氧化斑,从而保证高数据存储量密度,同时半永久性地保证数据维护期限。组成:通过控制施加在尖端(50)上的脉冲电压的大小或脉冲电压的施加时间来选择性氧化氧化斑(60),其中尖端(50)移动氧化层(30)的相。氧化物斑点(60)的尺寸不同。在氧化层(30)和尖端(50)之间施加偏压,以选择性地读取具有尖端(50)的氧化的氧化物斑点的尺寸。

著录项

  • 公开/公告号KR100425339B1

    专利类型

  • 公开/公告日2004-03-19

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR19970019984

  • 发明设计人 KIM BYEONG MAN;YOO IN GYEONG;

    申请日1997-05-22

  • 分类号G11B19/02;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:18

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