METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE FOR IMPROVING LEAKAGE CURRENT CHARACTERISTIC BETWEEN ERASE GATE AND FLOATING GATE

摘要

PURPOSE: A fabrication method of a non-volatile memory device is provided to improve a leakage current characteristic between an erase gate and a floating gate by forming a thin gate insulating layer of a transistor necessary for satisfying a low-voltage operating speed. CONSTITUTION: A floating gate(63a) and a control gate(65a) are formed on a cell region of a semiconductor substrate(51). An oxide layer is formed on a peripheral region of the semiconductor substrate. The oxide layer is removed therefrom and a gate insulating layer(62) is formed thereon. A conductive material layer is formed on the entire surface of the semiconductor substrate. A masking process is performed by using a photoresist. An erase gate(71a) is formed to overlap with the control gate adjacent to the cell region of the semiconductor substrate. A low-voltage transistor is formed on a peripheral region of the semiconductor substrate.