Manufacturing method of FeTaN soft magnetic thin film for magnetic devices

摘要

PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.