TRANSISTOR STRUCTURE FOR ESD PROTECTION CIRCUIT OF SEMICONDUCTOR DEVICE TO INDUCE UNIFORM DISTRIBUTION OF INJECTED CHARGES AND IMPROVE RELIABILITY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A transistor structure for an ESD(electrostatic discharge) protection circuit of a semiconductor device is provided to induce uniform distribution of injected charges and improve reliability of the semiconductor device by making a low-resistance metal layer come in contact with the upper part of a gate polysilicon layer at regular intervals after the metal layer is deposited on a gate. CONSTITUTION: The first and second terminals are disposed on a semiconductor substrate(20). An active region is coupled to the first and second terminals, disposed in the semiconductor substrate under the first and second terminals. The upper surface of a gate in a direction of a major axis is electrically connected to a metal line through a metal layer filled in a plurality of contact holes. The gate is disposed between the active regions.