Method for growing GaN crystalline using lateral epitaxy growth

摘要

PURPOSE: A method is to selectively grow GaN single crystals to simplify the ELO fabrication process and thereby greatly reduce the processing time for the growth of GaN single crystals. CONSTITUTION: A method includes (a) directly forming a silicon oxide (SiO_2) pattern on a semiconductor substrate; (b) introducing the semiconductor substrate with the silicon oxide pattern formed thereon into a metal organic chemical vapor deposition reactor to grow a GaN cold buffer layer to a predetermined thickness at a first temperature; (c) raising the temperature of the reactor to a second temperature for heat treatment to move the GaN buffer layer formed on a silicon oxide strip to a region between the silicon oxide patterns and thereby form GaN single crystals only on a sapphire substrate exposed between the silicon oxide patterns; (d) selectively grow the GaN single crystals between the silicon oxide patterns such that the grown GaN single crystals are continuously grown laterally on the silicon oxide patterns to combine the silicon oxide patterns together; and (e) growing the GaN single crystal layer thick.