首页> 外国专利> DEVICE FOR MICROWAVE VACUUM-PLASMA SURFACE TREATMENT WITH ELECTRON CYCLOTRON RESONANCE

DEVICE FOR MICROWAVE VACUUM-PLASMA SURFACE TREATMENT WITH ELECTRON CYCLOTRON RESONANCE

机译:电子回旋共振微波真空等离子体表面处理装置

摘要

FIELD: vacuum-plasma treatment of the material surface of microelectronics, metal and alloys by flows of particles. SUBSTANCE: an open low-quality resonator in the form of a truncated cone, matching the impedances of the load plasma and microwave oscillator, forms a variable electromagnetic field with operating mode E01 directed to the region of electron cyclotron resonance and together with the magnetic system forms a homogeneous directed flow of plasma ions to the treated surface. EFFECT: produced a device for ion treatment of the surface of materials with a high degree of homogeneity and a considerable range of densities of flow of particles. 3 dwg
机译:领域:通过粒子流对微电子,金属和合金的材料表面进行真空等离子体处理。物质:呈圆锥台形式的开放式低质量谐振器,与负载等离子体和微波振荡器的阻抗匹配,形成可变电磁场,其工作模式E 01 指向电子区域回旋加速器共振并与磁性系统一起形成均匀的定向等离子流到处理过的表面。效果:生产出一种用于对材料表面进行离子处理的设备,该设备具有高度的均质性和相当大的颗粒流动密度范围。 3 dwg

著录项

  • 公开/公告号RU2223570C1

    专利类型

  • 公开/公告日2004-02-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号RU20020127839

  • 发明设计人 KOSHKIN V.V.;

    申请日2002-10-18

  • 分类号H01J37/08;H05H1/46;H01L21/00;H01J37/32;C30B35/00;

  • 国家 RU

  • 入库时间 2022-08-21 22:45:09

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