Highly sensitive and high-resolution photoresist for the ion projection lithography -

摘要

The present invention relates to a photoresist for the ion projection lithography - as well as a method for the structuring of substrates, wherein the photoresist 4 according to the invention is used. The photoresist contains a triphenylsulfonium - perfluoro alkane sulfonate as a photo acid and triphenyl sulfo acetate present as a photo base. The photoresist is a very high exposure sensitivity and is therefore eminently suitable for the ion projection lithography -. It is possible for a resolution of less than 90 nm to be achieved, in the case of a sensitivity of & 4 μc / cm².