Semiconductor chip manufacturing method, e.g. for LED manufacture, by matching thermal expansion coefficient to carrier to radiation profile and pulse length of laser beam used to separate from substrate

摘要

A semiconductor layer grown on a substrate is applied to a carrier and separated from the substrate by irradiating with a pulsed laser beam. The thermal expansion coefficient of the carrier is matched to the radiation profile and pulse length of the laser beam pulse, and to the thermal expansion coefficient of the semiconductor layer and the thermal expansion coefficient of the substrate, to reduce strain between the substrate, semiconductor layer and carrier during manufacture. The semiconductor layer contains a nitride compound semiconductor. The carrier includes an iron-nickel-cobalt alloy. The substrate includes silicon, silicon carbide or aluminum oxide, especially sapphire.