Pulsed green laser beam a-Si crystallization and long line beam generation for LCD and OLED TFT-panels manufacturing

摘要

Green laser annealing (GLA) by pulsed solid state lasers offers a variety of options to prepare a-Si thin films for TFT (thin film transistors) flat panel display applications. Recent investigations have shown that the green wavelength can be applied at medium energy density in the range of 300–500mJ/cm² using a 60–150ns laser pulse. The crystallization leads to p-Si material which is comparable to the near complete melt ELA material which is widely used in the display industry.