Electronic power module, comprises at least two semiconductor chips arranged in stack on substrate carrier, at least one chip being a silicon-carbide power semiconductor device

摘要

At least two semiconductor chips (2,3) form a stack (8) on a substrate carrier (4). At least one of the chips in the stack is a silicon-carbide power chip. The silicon-carbide chip may be the power semiconductor chip of a power diode or power transistor. An Independent claim is included for a method of manufacturing an electronic power module.