Flip-chip Bonded SiC Power Devices on a Low Temperature Co-fired Ceramic (LTCC) Substrate for Next Generation Power Modules

摘要

This paper explores the design and performance benefits of an LTCC-based power module using SiC power devices. The goal of the design is to achieve high power density with an improved level of reliability as compared to the state-of-the-art, especially at elevated operating temperatures. This will enable a more complete leveraging of the benefits of SiC semiconductor technology. The reliability of existing power modules under high thermo-mechanical stress is adversely affected by the presence of wire bonds and by delamination at the die attachment interface between the die and substrate. As power devices are driven at higher frequencies, wire bonds will inhibit performance by introducing ringing and large overshoots due to the parasitic inductances they introduce in the critical switching loops in the circuit. A flip-chip bonding process for bonding the power devices has been investigated in this paper as an alternative to wire-bonding. It was found that flip-chip interconnects not only improved the switching characteristics of the device, but also reduced thermo-mechanical stresses on the bonding interface.