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X-ray radiation dose measuring device, has thin-film diode structure comprising e.g. film electrodes and photoactive semiconductor film layer

机译:X射线辐射剂量测量装置具有薄膜二极管结构,该薄膜二极管结构包括例如膜电极和光敏半导体膜层

摘要

The device absorbs radiation and outputs a signal representing a measure of the dose, based on the absorption. The absorption structure consists of stacked thin film layers arranged on a film-like carrier (11) and including at least one thin-film diode structure for delivering the output signal. The diode structure may comprise two film electrodes (12,14) and a photoactive semiconductor film layer (13) between them. An independent claim is included for a radiation image pick-up apparatus.
机译:该设备吸收辐射并基于吸收量输出代表剂量测量值的信号。吸收结构由布置在膜状载体(11)上的堆叠的薄膜层组成,并且包括至少一个用于传递输出信号的薄膜二极管结构。二极管结构可以包括两个膜电极(12,14)和在它们之间的光敏半导体膜层(13)。对于放射线图像拾取设备包括独立权利要求。

著录项

  • 公开/公告号DE10313602A1

    专利类型

  • 公开/公告日2004-10-21

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE2003113602

  • 发明设计人 HOHEISEL MARTIN;BRABEC CHRISTOPH;

    申请日2003-03-26

  • 分类号G01T1/02;G01T1/24;G01T1/29;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:27

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