Production of a shallow trench insulation structure used in the production of integrated circuits comprises forming a mask on a substrate, forming trenches in the substrate using a mask, and further processing

摘要

Production of a shallow trench insulation structure comprises forming a mask (3) on a substrate (1), forming trenches (2) in the substrate using a mask, selectively depositing a first insulating material (5) to partially fill the trenches with the insulating material in the presence of the mask, and applying a second insulating material (6) on the whole surface of the structure to fill the trenches in the substrate up to the upper side of the mask.