Dynamic memory cell refreshing method for memory circuit for mobile applications effected with minimum current requirement

摘要

The memory cell refreshing method has the word line (WL) coupled to the memory cell (2) activated, with amplification of the charge potential of the bit lines (BL) of the bit line pair (BLP) in the direction of a higher or a lower refresh potential, in dependence on the charge information held in the memory cell, before de-activation of the word line and charging of the bit lines to a refresh mean potential. The potential difference between the higher refresh potential and the mean refresh potential is greater than the potential difference between the higher charge potential and the mean potential during the read-out of the memory cell. An Independent claim for a memory circuit is also included.