A method for the production of integrated circuits with uniform silicide blocking layers and thus integrated circuits produced

摘要

A gate which has side walls, on a substrate of an integrated circuit. A barriers protection - spacer on the side walls of the gate is formed from. A portion of the barrier layer - spacer projects from the side walls of the gates, as a result of which a lower surface of the barriers protection - spacer is exposed, which is opposite the substrate of the integrated circuit. A silicide layer is applied to the section of the barriers protection - spacer, which projects from the side walls of the gates formed. There are also produced by the process by means of these circuits are provided.