首页> 外国专利> Metal oxide semiconductor gate circuit includes driver circuit carrying out test to prevent simultaneous conduction when applied voltage cannot be resisted

Metal oxide semiconductor gate circuit includes driver circuit carrying out test to prevent simultaneous conduction when applied voltage cannot be resisted

机译:金属氧化物半导体栅极电路包括执行测试的驱动器电路,以防止在无法抵抗施加的电压时同时导通

摘要

A number of gate-controlled switches is included, with a driver circuit connected to them. The driver circuit is configured to measure a characteristic of one or more of them. This ascertains whether the switch can resist a blocking voltage without conducting. The driver circuit automatically prevents simultaneous conduction of the gate controlled switch, when at least one of them is not in the position to resist renewed applied voltage, without conducting. An Independent claim is included for the corresponding method.
机译:包括许多门控开关,驱动器电路连接到它们。驱动器电路被配置为测量其中一个或多个的特性。这确定了开关是否可以抵抗阻塞电压而不导通。当驱动器电路中的至少一个不处于抵抗新施加的电压的位置而不导通时,驱动器电路会自动阻止其同时导通。相应方法包括独立声明。

著录项

  • 公开/公告号DE10325588A1

    专利类型

  • 公开/公告日2003-12-18

    原文格式PDF

  • 申请/专利权人 INTERNATIONAL RECTIFIER CORP. EL SEGUNDO;

    申请/专利号DE2003125588

  • 发明设计人 NADD BRUNO C.;

    申请日2003-06-05

  • 分类号H02M1/088;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:16

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