Cleaning composition, used for removing resist or residues of resist or from dry etching in semiconductor device production, contains fluoride of non-metal base, water-soluble organic solvent, acid and water

摘要

Cleaning composition for removing resists contains (A) a salt of hydrofluoric acid (HF) and a base containing a non-metal, (B1) a water-soluble organic solvent, (C) an (in)organic acid and (D) water and has a pH of 4-8. Independent claims are also included for the following: (1) cleaning composition, pH 4-8, containing components (A), (B1), (C) and (D) as above and (E1) ammonium sa (2) cleaning composition, pH 2-8, containing components (A) salt as above, (B) water-soluble organic solvent, (C1) phosphonic acid, (D) water and (E) a base containing a non-metal; cleaning composition, pH 2-8, containing components (A), (B2), (C2), (D) and (E) as above and (F) a copper-corrosion inhibitor; (3) 3 methods of producing a semiconductor device, in which the residues of the resist film or from dry etching are removed with the cleaning composition.