首页> 外国专利> Process for locally etching a substrate used in the production of electron emitting devices comprises etching the insulating layer under the action of heat after etching the conducting layer, and forming a recess in the insulating layer

Process for locally etching a substrate used in the production of electron emitting devices comprises etching the insulating layer under the action of heat after etching the conducting layer, and forming a recess in the insulating layer

机译:用于局部蚀刻用于电子发射器件的制造中的基板的工艺包括:在蚀刻导电层之后,在热的作用下蚀刻绝缘层;以及在绝缘层中形成凹槽。

摘要

Process for locally etching a substrate consisting of a metallic conducting layer and an insulating layer comprises etching the insulating layer under the action of heat after etching the conducting layer, and forming a recess in the insulating layer by etching the insulating layer with the depth being determined by the duration of the feed of the laser beam. An independent claim is also included for a device for carrying out the process comprising: a closed chamber having a connection for introducing a gas atmosphere to the chamber; a substrate holder and a laser device for directing a laser beam, preferably through a window of the chamber, onto the substrate. A power adjusting unit is assigned to the laser device.
机译:局部蚀刻由金属导电层和绝缘层组成的基板的工艺包括:在蚀刻导电层之后,在热的作用下蚀刻绝缘层;以及通过蚀刻绝缘层并确定深度来在绝缘层中形成凹槽。由激光束的馈送持续时间决定。还包括用于执行该过程的装置的独立权利要求,该装置包括:封闭腔室,该封闭腔室具有用于将气体气氛引入腔室的连接;衬底支架和激光装置,用于将激光束优选通过腔室的窗口引导到衬底上。功率调节单元被分配给激光装置。

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