A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by the steps useful in semiconductor technology

摘要

A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by:application of an electrical contact material containng Au and at least one doping material, i.e. an element from the group Ge, Si, Sn, and Te, and of tempering the n-conductive AlGaInP-based layer. An independent claim is included for a structural element having an epitaxial semiconductor layer series with an electromagnetic radiation emitting active zone.