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Charge pump circuit with via bridging transistor

机译:带过桥晶体管的电荷泵电路

摘要

PROBLEM TO BE SOLVED: To obtain a charge pump circuit that can improve booster efficiency. ;SOLUTION: In a first booster stage 1, an external power voltage Vcc is supplied via a first gate transistor T11. The first booster stage 11 is connected to a second one 12 via a second gate transistor T12. Also, the second booster stage 12 outputs an internal power supply voltage Vout via a third gate transistor T13. Each of other end of the first and second booster stages 11 and 12 is connected to each drive circuit 21. A bypass transistor TB is connected between the second and third gate transistors T12 and T13. The bypass transistor TB are turned on and off by the drive circuit 21 with the third gate transistor T13, thus carrying out single-stage booster pumping operation using a fist booster stage 1.;COPYRIGHT: (C)2000,JPO
机译:要解决的问题:获得可以提高升压效率的电荷泵电路。 ;解决方案:在第一升压级1中,通过第一栅极晶体管T11提供外部电源电压Vcc。第一升压级11经由第二栅极晶体管T12连接至第二升压级12。另外,第二升压级12经由第三栅极晶体管T13输出内部电源电压Vout。第一和第二升压级11和12的另一端的每一个连接到每个驱动电路21。旁路晶体管TB连接在第二和第三栅极晶体管T12和T13之间。驱动电路21利用第三栅极晶体管T13使旁路晶体管TB导通和截止,从而使用第一升压级1执行单级升压泵浦操作。版权所有:(C)2000,JPO

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