COMPONENT WITH INTEGRATED SEMICONDUCTOR CIRCUIT WITH BODY POLARIZATION CIRCUIT FOR GENERATING A DIRECT POLARIZATION VOLTAGE OF WELLS OF A SUFFICIENT LEVEL

摘要

The invention relates to a semiconductor integrated circuit component comprising a semiconductor field effect transistor or MISFET (1; 2) and a body bias circuit (110). The MISFET (1; 2) has a source electrode (S) and a drain electrode (D) of a first type of conductivity (p +; n +) and a gate electrode (G), and the MISFET (1; 2) is formed in a well of a second type of conductivity (n; p). The body bias circuit (110) generates a voltage (Vbp; Vbn) in the well by circulating a prescribed current (Ibp; Ibn) in a direct direction in a diode (11) formed of the well and the source electrode ( S) MISFET (1; 2).