4 H-TYPE POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT FORMED ON 4 H-TYPE POLYTYPE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a polytype of an optimum combination for an SiC substrate and overgrown III-V group nitride.;SOLUTION: A 4 H-InGaAlN alloy light emitting element and an electronic element on a nonpolar face are formed on 4H-AlN or 4H-AlGaN on a (11-20)a face 4H-SiC substrate. Generally, nonpolar 4 H-AlN is grown up on 4 H-SiC (11-20) by molecular beam epitaxy (MBE). A III-V group nitride element layer is grown up by metal organic vapor phase epitaxy (MOCVD), and all layers become the 4 H-type polytypes.;COPYRIGHT: (C)2006,JPO&NCIPI